Manufacturer | Toshiba Semiconductor and Storage |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Product Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Resistor - Base (R1) | 10kOhms |
Frequency - Transition | 250MHz, 200MHz |
Supplier Device Package | ES6 |
Resistor - Emitter Base (R2) | - |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector (Ic) (Max) | 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Voltage - Collector Emitter Breakdown (Max) | 50V |
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