Manufacturer | UnitedSiC |
FET Type | N-Channel |
Vgs (Max) | ±25V |
Technology | SiCFET (Cascode SiCJFET) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 4-PowerTSFN |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 6V @ 10mA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 58mOhm @ 20A, 12V |
Power Dissipation (Max) | 125W (Tc) |
Supplier Device Package | 4-DFN (8x8) |
Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 12 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 12V |
Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |