SI4866BDY-T1-E3 Specifications
Manufacturer | Vishay Siliconix |
FET Type | N-Channel |
Vgs (Max) | ±8V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 12A, 4.5V |
Power Dissipation (Max) | 4.45W (Tc) |
Supplier Device Package | 8-SOIC |
Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 4.5 V |
Drain to Source Voltage (Vdss) | 12 V |
Input Capacitance (Ciss) (Max) @ Vds | 5020 pF @ 6 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Current - Continuous Drain (Id) @ 25°C | 21.5A (Tc) |
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