Manufacturer | GeneSiC Semiconductor |
FET Type | N-Channel |
Vgs (Max) | ±15V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.69V @ 2mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
Power Dissipation (Max) | 74W (Tc) |
Supplier Device Package | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
Drain to Source Voltage (Vdss) | 1200 V |
Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high-power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
IXYS
onsemi
Infineon Technologies
Infineon Technologies
IXYS
Infineon Technologies
onsemi
IXYS
UnitedSiC
UnitedSiC
GeneSiC Semiconductor
Infineon Technologies