Manufacturer | GeneSiC Semiconductor |
FET Type | N-Channel |
Vgs (Max) | +20V, -5V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
Power Dissipation (Max) | 53W (Tc) |
Supplier Device Package | TO-247-3 |
Gate Charge (Qg) (Max) @ Vgs | - |
Drain to Source Voltage (Vdss) | 1700 V |
Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high-power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.
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