Manufacturer | Diodes Incorporated |
FET Type | 8 N-Channel, Common Gate, Common Source |
FET Feature | Standard |
Power - Max | 660mW |
Mounting Type | Surface Mount |
Package / Case | 12-UFQFN Exposed Pad |
Product Status | Active |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 450mOhm @ 200mA, 4.5V |
Supplier Device Package | U-QFN1515-12 |
Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 4.5V |
Drain to Source Voltage (Vdss) | 12V |
Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 6V |
Current - Continuous Drain (Id) @ 25°C | 2A |
Leading businesses in the automotive, industrial, computing, consumer electronics, and communications industries receive high-quality semiconductor products from Diodes Incorporated. To satisfy client's needs, they make use of their enlarged product line of discrete, analog, and mixed-signal components as well as cutting-edge packaging technologies. We can be a leading supplier for high-volume, high-growth markets thanks to their comprehensive range of application-specific solutions and solutions-focused sales, as well as their global operations of 25 sites, which include engineering, testing, production, and customer service.
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