Manufacturer | Toshiba Semiconductor and Storage |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Diode Type | Schottky |
Mounting Type | Surface Mount |
Package / Case | SOD-123F |
Product Status | Active |
Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
Supplier Device Package | S-FLAT (1.6x3.5) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 1.5 mA @ 30 V |
Voltage - DC Reverse (Vr) (Max) | 30 V |
Current - Average Rectified (Io) | 1A |
Operating Temperature - Junction | -40°C ~ 125°C |
Voltage - Forward (Vf) (Max) @ If | 360 mV @ 1 A |
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