Manufacturer | Wolfspeed, Inc. |
FET Type | 2 N-Channel (Half Bridge) |
FET Feature | Silicon Carbide (SiC) |
Power - Max | 50mW |
Mounting Type | Chassis Mount |
Package / Case | Module |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.6V @ 115mA |
Operating Temperature | -40°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 4.2mOhm @ 425A, 15V |
Supplier Device Package | - |
Gate Charge (Qg) (Max) @ Vgs | 1135nC @ 15V |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Input Capacitance (Ciss) (Max) @ Vds | 30.7nF @ 800V |
Current - Continuous Drain (Id) @ 25°C | 450A |
Wolfspeed, A Cree Company, establishes itself as a market leader in the design and production of the most robust SiC and GaN Power and RF solutions. It has state-of-the-art wide bandgap semiconductor technology, allowing it to produce strong electronic systems that are lightweight, quick, and tiny in size.