Manufacturer | Infineon Technologies |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Operating Temperature | -40°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 0.8mOhm @ 30A, 10V |
Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
Supplier Device Package | MG-WDSON-2, CanPAK M™ |
Gate Charge (Qg) (Max) @ Vgs | 343 nC @ 10 V |
Drain to Source Voltage (Vdss) | 25 V |
Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 12 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C | 46A (Ta), 180A (Tc) |
On April 1st, 1999, Siemens Semiconductors changed their name to Infineon Technologies.A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
A dynamic and adaptable firm, Infineon. Our ongoing objective is to succeed in the fiercely competitive and dynamic microelectronics industry. Infineon, the top creator, manufacturer, and supplier in the world, offers a variety of goods utilized in different microelectronics applications. Our product line also comprises discrete semiconductor goods in addition to logic devices, such as digital, mixed-signal, and analog integrated circuits.