Manufacturer | Infineon Technologies |
FET Type | N-Channel |
Vgs (Max) | +23V, -7V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Product Status | Active |
Vgs(th) (Max) @ Id | 5.7V @ 10mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 40mOhm @ 25A, 18V |
Power Dissipation (Max) | 227W (Tc) |
Supplier Device Package | PG-TO247-3-41 |
Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
Drain to Source Voltage (Vdss) | 1200 V |
Input Capacitance (Ciss) (Max) @ Vds | 2120 pF @ 800 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
On April 1st, 1999, Siemens Semiconductors changed their name to Infineon Technologies.A dynamic more flexible company geared towards success in the competitive, ever-changing world of microelectronics.
A dynamic and adaptable firm, Infineon. Our ongoing objective is to succeed in the fiercely competitive and dynamic microelectronics industry. Infineon, the top creator, manufacturer, and supplier in the world, offers a variety of goods utilized in different microelectronics applications. Our product line also comprises discrete semiconductor goods in addition to logic devices, such as digital, mixed-signal, and analog integrated circuits.