Manufacturer | GeneSiC Semiconductor |
FET Type | N-Channel |
Vgs (Max) | ±15V |
Technology | SiCFET (Silicon Carbide) |
FET Feature | - |
Mounting Type | Through Hole |
Package / Case | TO-247-4 |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.7V @ 8mA |
Operating Temperature | -55°C ~ 175°C (TJ) |
Rds On (Max) @ Id, Vgs | 58mOhm @ 40A, 15V |
Power Dissipation (Max) | 438W (Tc) |
Supplier Device Package | TO-247-4 |
Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 15 V |
Drain to Source Voltage (Vdss) | 1700 V |
Input Capacitance (Ciss) (Max) @ Vds | 4523 pF @ 1000 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high-power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC's technology to elevate the performance and efficiency of their products.